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SNDCT 2025 Call for Papers

Date: 2025/01/16


The 5th Symposium on Nano-Device Circuits and Technologies (SNDCT 2025) will be hosted by the Taiwan Semiconductor Research Institute, National Applied Research Laboratories, from May 27-28, 2025. The symposium aims to provide a platform for academia and industry in semiconductor-related fields to exchange ideas and experiences in advanced device fabrication and system integration, which are closely linked to the important applications such as artificial intelligence, vehicle electronics, smart manufacturing, internet of things, high-speed communication, and quantum computing. Experts in related fields are invited to discuss and explore the special focus sessions on “Emerging devices and computing technology”, “Advanced logic and memory technology”, “High frequency, power devices and circuits, and compound semiconductor technology”, “MEMS, sensors, advanced packaging, and heterogeneous integration”, “Optoelectronics and silicon photonics”, and “Novel materials characterization”.
 
●Event date: May 27, 2025 to May 28, 2025.
 
●Call for Papers : From now till March 16, 2025 (Deadline March 31, 2025)

●Call for paper / Topics

1.Emerging Device and Computing Technology
Nano-device technology; process technology; high-mobility channel MOSFETs; high-k/metal gate materials; negative capacitance FET; TFT; device applications of low‐dimensional materials; qubit devices; quantum computing; reliability; device modeling and simulation

2.Advanced Logic and Memory Technology
Logic devices and circuits; embedded and standalone memory technology; conventional and emerging memories (SRAM, DRAM, Flash, ReRAM, MRAM, and ferroelectric memory…etc.); design/system technology co-optimization (DTCO/STCO); novel integration /circuit design schemes and architectures in artificial intelligence, internet of things, compute-in-memory, high-performance computing, low power, and low voltage applications

3.High Frequency, Power Devices and Circuits, and Compound Semiconductor Technology
Compound semiconductor materials and devices; high-electron mobility transistors (HEMTs); heterojunction bipolar transistors (HBTs); heterostructures; monolithic integration; E/D-mode; epitaxy technology; thermal management;  power ICs; power device characterization, modeling, simulation and reliability; high-frequency devices and circuits; MMICs; RFICs; millimeter-wave, sub-THz, and THz integrated circuits; antenna theory, design and measurement; MIMO antennas; beamforming and multi-beam systems

4.MEMS, Sensors, Advanced Packaging, and Heterogeneous Integration
Microelectromechanical Systems (MEMS); Sensors; Heterogeneous Integration; Advanced Packaging; Wafer-Level Packaging; Fan-Out Packaging; 2.5D/3D Packaging; Silicon Interposer; Through-Silicon Via (TSV); Micro Bump; High-Density Interconnect (HDI); System-in-Package (SiP)

5.Optoelectronics and Silicon Photonics
Advanced in Photonic devices for high-speed photodetectors and modulators, and light sources; Photonic-electronic integration for optical interconnects; Metalens for augmented or virtual reality and holography; Quantum photonics for computation, sensing and encryption, Optical Sensing devices for single-photon sensitivity, Time-Of-Flight (ToF) and nonvisible image sensors, in-display sensors and imaging sensors; Imagers for high-speed and high-time resolution CMOS imagers, SPAD imagers, and CCD imagers; TFTs for photonics applications; Flexible, stretchable, and/or printed electronics; Light emitting devices, Perovskites or quantum dots optical devices; Semiconductor lasers

6.Novel Materials Characterization
Scanning electron microscopy (SEM); Scanning probe microscopy (SPM); Transmission electron microscopy (TEM) with selected area diffraction pattern (SADP); X-ray diffraction (XRD); Auger electron spectrometer (AES); X-ray photoelectron spectroscopy (XPS); Secondary Ion Mass Spectroscopy (SIMS); Fourier-transform infrared spectroscopy (FTIR); Raman spectroscopy; atom probe tomography (APT); Nano-indentation, Spreading resistance profiling (SRP); Hall effect Measurement; Differential Hall Effect Metrology (DHEM); Device reliability; Hot carrier phenomena; Bias temperature instability; Charge trapping; Thermal effect; Flicker noise; RTN; Dielectric breakdown; Failure analysis; Electromigration; Device dynamic characterization; Parameter extraction method
 
●Template: Download

●Organizer: Taiwan Semiconductor Research Institute (TSRI)
 

●Venue: No.26, Prosperity Road I, Hsinchu Science Park, Hsinchu 300091, Taiwan.
 
● Submission/Registration:https://cs.tsri.narl.org.tw/NDLCS/NDLSeminar/SeminarBulletin.aspx

Awards
Best Paper Awards
• Platinum Award (1st place for each topic): Awarded certificates and NTD 15,000
• Gold Award (one winner for each topic): Awarded certificates and NTD 10,000
• Silver Award (one winner for each topic): Awarded certificates and NTD 5,000

Best Poster Awards
• At least 6 winners in total (at least one winner for each topic): Awarded certificates and NTD 5,000.
 
Review Guidelines
1. Best Paper Award: After students submissions are completed, the committee will invite professionals to evaluate the entries based on their respective topics. The list of award recipients will be announced and awarded during the ceremony on May 28.

2. Best Poster Award: The posters must be fully displayed at the exhibition venue no later than 9:00 AM on May 28, and all of the presenter must remain by their poster board for the Q&A discussion during the Poster Review Session 11:00 AM – 12:00 PM on May 28. The evaluation of the Best Poster Award will be based on criteria such as poster content, format, and the participants’ responses.
Each submission category will be evaluated separately. To encourage early participation, the participants who complete their poster setup before May 27 noon will receive a small gift.

3. Eligibility for Best Paper Awards and Best Poster Awards: Current undergraduate, master's, or doctoral students.

4. The authors may include undergraduate, master's, and doctoral students, research assistants, postdoctoral researchers, researchers, advisors, or industry collaborators.

5. There is no limit on the number of submissions per participant. Only submissions accepted by the SNDCT 2025 committee will be eligible for Best Paper Awards and Best Poster Awards evaluation. Additionally, the presenter of the poster must be a registered participant of the conference.

6. The TSRI JDP team is required to submit a paper, as presenting research findings is a mandatory criterion for applying to the TSRI JDP program.

7. Please use the designated submission template to prepare and submit an abstract of 2 to 4 pages, with a maximum of 4 pages. The content should include research findings, tables, figures, and references.

8. All files must be uploaded in PDF format. Please carefully check the content and ensure that special characters are displayed correctly. The file size must not exceed 20MB.

9. Please upload the abstract via the online submission system.
 
Poster Format
The poster board dimension is 200 cm in height and 100 cm in width, and is oriented vertically. The content of the poster may be presented in either Mandarin or English. Posters must be clear and easy to read. It is suggested to use 24-point font (~0.9 cm height) or larger, and the title is suggested to be written in 36-point font (~1.2 cm height), for ease of reading. The top of the posters should contain the article title, author´s name, information about the author, and the author's contact information for readers who wish to inquire.

Notice
1. The Award Ceremony will take place at 12 pm on May 28. Meanwhile, Best Paper Awards and Best Poster Awards will be announced and granted to the winners by SNDCT 2025 committee. All SNDCT 2025 attendees are invited to attend the ceremony.

2. The winners of Best Paper Awards should be in the ceremony when the award is announced. If the winner is absent, the scholarship will be canceled. The certificates of the award will be sent to the address on the registration system.

3. The winners of the Best Poster Awards could designate one of the co-authors to accept the award. The recipient must register for SNDCT 2025 and be in the ceremony. If the winner is absent, the scholarship will be canceled, and the awarded certificates will be sent to the address on the registration system.

4. The posters should be removed before 1:00 pm on May 28 (Wednesday). TSRI will discard the display materials that not removed following the closing.

5. Authors of accepted papers must transfer the copyright to TSRI and provide the article in Mandarin for publishing articles. The prize should be included in the tax declaration.

6. The SNDCT 2025 committee keeps the right for adding remarks and modifing the description.
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