CMOS-MEMS Process
Sensor
A fully CMOS-compatible MEMS multi-project wafer process. The process comprises coating a layer of thick photoresist on a wafer surface, patterning the photoresist to define a micromachining region, and performing micromachining in the micromachining region to form suspended microstructures.
- Country: United States
- Patent No.: 7435612B2Download
- Country: Republic of China
- Patent No.: I293787Download