The present invention is a structure for a metal-oxide-semiconductor field effect transistor (MOSFET). The structure includes a MOSFET, a sensing layer, and a reference electrode. The reference electrode and the sensing layer are formed on the first surface of the MOSFET, and are arranged in a way that they are uniformly and electrically coupled to each other. With the implementation of the present invention, the electric field between the sensing layer and the reference electrode is uniformly distributed to stabilize the working signal of the MOSFET sensor.

• Country: United States
• Patent No.: 8704278B2Download