Taiwan Semiconductor Research Institute

Patents

The Taiwan Semiconductor Research Institute of National Institutes of Applied Research (TSRI) spreads TSRI's research results throughout the industry through the patent and technology transfer service with a view to improving the competitiveness of the industry.
Vendors that are interested in TSRI’s patents and technologies are welcome to reach out to Mr. Lo at 03-5773693 ext. 7635

Type

Monolithic Z-Axis Displacement CMOS MEMS Accelerometer

The present invention is a monolithic Z-axis displacement accelerometer structure formed by a CMOS and a MEMS. The structure includes a matching frame, two anchors, a first comb structure, a second comb structure, and a proof mass...

Structure for MOSFET Sensor

The present invention is a structure for a metal-oxide-semiconductor field effect transistor (MOSFET). The structure includes a MOSFET, a sensing layer, and a reference electrode...

Hydrogen Ion-Sensitive Field Effect Transistor and Manufacturing Method Thereof

The present invention is a hydrogen ion-sensitive field effect transistor and a manufacturing method thereof. The hydrogen ion-sensitive field effect transistor includes a semiconductor substrate, an insulating layer, a transistor gate, and a sensing film layer...

CMOS-MEMS Process

A fully CMOS-compatible MEMS multi-project wafer process. The process comprises coating a layer of thick photoresist on a wafer surface, patterning the photoresist to define a micromachining region...

Miniature Gas Sensor Structure

The present invention is a gas sensor structure comprising a gas sensor chip. The back of the sensing material of the chip is a hollow structure. An insulating layer is disposed below the sensing material. A micro-heater is disposed around the sensing material. The sensing material adheres to sensing electrodes...